Material chracterization by Hall method

Material chracterization by Hall method

Sukurta: 26 November 2018
Unit: Faculty of Physics
Keywords: Hall effect, characterization of samples, resistivity, mobility, carrier concentration, conductivity, magnetoresistance, Hall coefficient, optoelectronics, LED, lasers, solar cells, sensors

Material chracterization by Hall method. Primary application for measuring resistivity, mobility, and carrier concentration.

Possibility to perform I-V curve measurements.
Current source range: 1 nA – 20 mA.
Sample size: max 2 cm × 2 cm.
Measurement materials: all semiconductors including Si SiGe, SiC, GaAs, InGaN, InP, GaN (n type and p type).
Resistivity measurement range: 10-4 – 107 Ω∙cm.
Mobility measurement range: 1 – 107 cm2/V∙s.
Bulk carrier concentration measurement range: 107 – 1021 cm-3.
Other measurement types: conductivity, magnetoresistance, Hall coefficient, V/H ratio of resistance. 

Application. Application field is Si, GaN, GaAs microelectronics and optoelectronics (light emitting diodes, lasers, solar cells, sensors).

Contacts: Dr. Vitalijus Bikbajevas, tel. +37060034126,