- Unit: Faculty of Physics
- Keywords: Deep level transient spectroscopy, DLTS, semiconductor compounds, impact of radiation, HERA-DLTS System FT 1030
The standard and specialized regimes are applied to record capacitance and/or current change spectra under thermal emission from deep levels.
The deep level signatures (as activation energy, density of traps and capture cross-section) are extracted by using Arrhenius plots. The Laplace transform and Fourier transform techniques as well as box-car and lock-in amplifier integrators are employed. The junction structures of a fixed area can only be examined.
Measurements are carried out by using DLS-82E and HERA – DLTS System FT 1030 spectrometers.
Application. Enterprises of electronics and photo-electricity. Control of variations of the operational characteristics of devices under radiation, thermal and combined treatments. Ex-situ control of the impact of irradiations.