Rapid thermal annealing

Sukurta: 26 November 2018
Unit: Faculty of Physics
Keywords: Annealing furnace, activation of dopants

Semiconductor wafer thermal processing with furnace which can reach temperatures up to 1200 °C, furnance‘s chamber is vacuumable or it can be filled with nitrogen, oxygen or argon gases.

Ramp up rate up to 150 K/s, chamber size is 10x100x100 mm.

Application. This service is relevant for inorganic semiconductor processing industry. Rapid annealing of semiconductor materials up to 1200 °C, in order to activate the dopants. 

Contacts: Dr. Ignas Reklaitis, tel. +37060034126,