Measurements of carrier lifetime and its lateral as well as depth distribution in semiconductor materials

Sukurta: 27 November 2018
Unit: Faculty of Physics
Keywords: Carrier lifetime, semiconductor materials

Determination of carrier lifetime in semiconductor materials. Lifetime measurement up to 1 ns, microwave response sensitivity ~ 0.5 mV. One sample at a time. Computer controlled measurements.

Application. Enterprises engaged in micro-electronics, nano-electronics and the production of photo-electricity devices.

Contacts: Dr. Eugenijus Gaubas,tel. +37060034126,