- Unit: Faculty of Physics
- Keywords: Annealing furnace, activation of dopants, UniTemp
- Responsible person: Dr. Ignas Reklaitis, tel.+37060034126,
Furnace can reach temperatures up to 1200 °C, furnance's chamber is vacuumable or it can be filled with nitrogen, oxygen or argon gases. Ramp up rate up to 150 K/s, chamber size is 10x100x100 mm.
Application. Rapid annealing of semiconductor materials up to 1200 °C, in order to activate the dopants.