Rapid thermal annealing furnace UniTemp RTP-1200-100

Sukurta: 20 November 2018
Unit: Faculty of Physics
Keywords: Annealing furnace, activation of dopants, UniTemp
Responsible person: Dr. Ignas Reklaitis, tel.+37060034126,

Furnace can reach temperatures up to 1200 °C, furnance's chamber is vacuumable or it can be filled with nitrogen, oxygen or argon gases. Ramp up rate up to 150 K/s, chamber size is 10x100x100 mm.

Application. Rapid annealing of semiconductor materials up to 1200 °C, in order to activate the dopants. 


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