HERA – DLTS System FT 1030 spectrometer

HERA – DLTS System FT 1030 spectrometer

Sukurta: 20 November 2018
Unit: Faculty of Physics
Keywords: Deep level transient spectroscopy, DLTS, semiconductor compounds, impact of radiation, HERA-DLTS System FT 1030
Responsible person: Dr. Eugenijus Gaubas, tel. +37060034126,

HERA – DLTS System FT 1030 spectrometer is designed for deep level transient spectroscopy (DLTS) of radiation and technological defects.

The structures containing p-n and Schottky barriers can be investigated. A simple capacitance-DLTS spectra can be measured on junction structure with barrier capacitance not larger than 3 nF. Different regimes of C-DLTS, current-DLTS O-DLTS can be implemented using this HERA – DLTS System FT 1030 spectrometer. Spectral measurements and primary data analysis is controlled by a computer. Temperature scans can be carried out in the temperature range of 4 K - 400 K. This spectrometer is devoted for analysis of the impact of the radiation, thermal and combined treatments as well as dopant distribution profiling and defect spectroscopy within a high resistivity junction layer.
Additional DLS-82E spectrometer is available for C-DL^TS temperature scans. 

Application. This spectrometer is designed for analysis of the impact of the radiation, thermal and combined treatments as well as dopant distribution profiling and defect spectroscopy within a high resistivity junction layer.

 

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