MOCVD epitaxy of III nitrides

MOCVD epitaxy of III nitrides

Sukurta: 26 November 2018
Unit: Faculty of Physics
Keywords: Epitaxial layers, growth, reactor, nitride semiconductors, GaN, AlN, InN, AlGaN, InGaN, InAlN, BGaN, MOCVD, MOVPE, high power electronics, optoelectronics

MOCVD epitaxy of III nitrides layers (GaN, AlN, InN, AlGaN, InGaN, InAlN, BGaN) and structures on sapphire, SiC, GaN, Si. Substrates for various optoelectronic devices.

Application.  Growth of layers for various optoelectronic devices (LEDs, diodes, transistors, solar cells) based on III-nitrides materials.
Properties of grown layers:
1) Unintentional doped GaN (uGaN), minimal electron concentration ne=1016 cm3, electron mobility µe=250 cm2/Vs, growth rate 0,1÷2,5 µm/h, layer thickness up to 15 µm.
2) n-type GaN:Si, ne=1016÷1018 cm3, µe=150÷250 cm2/Vs, growth rate 1÷2,5 µm/h.
3) p-type GaN:Mg, nh=1016÷1018 cm3, µh=5÷10 cm2/Vs, growth rate 0,1÷0,5 µm/h.
4) InGaN – In concentration can be varied from 1-30% or 60-99%.
5) InN, ne =1018÷1020 cm3, µe=600 cm2/Vs, growth rate 50÷100 nm/h.
6) AlGaN – Al concentration 0-100% growth rate 0,05÷1 µm/h, thickness 1 nm - 1 µm.
7) AlInN and BGaN under investigation.
8) Multistructures (e.g. InGaN/GaN QWs).
Possible substrates: sapphire, silicon, silicon carbide, bulk GaN.

Contacts: Dr. Arūnas Kadys, tel. +37060034126,