Reactive ion etching

Reactive ion etching

Sukurta: 26 November 2018
Unit: Faculty of Physics
Keywords: Etching of semiconductor structures, inorganic semiconductors

This service provides possibility to dry etch various inorganic semiconductors mesa structures. Preferable size of the wafer is 2’’but it is possible to etch the samples up to 8'' in diameter. Etch aspect ratio is 20:1.

Application. This service is relevant for inorganic semiconductor engineering industry. 

Contacts: Dr. Ignas Reklaitis, tel. +37060034126,