Deep level photo-ionization spectroscopy

Deep level photo-ionization spectroscopy

Sukurta: 27 November 2018
Unit: Faculty of Physics
Keywords: Ionization spectroscopy, photo-ionization, semiconductor devices, impact of irradiation

The steady-state and pulsed regimes are available. These techniques allow identification of defect attributed deep levels in semiconducting materials and semiconductor devices. Non-metallized areas should be available for the photo-excitation.

Application. Enterprises of electronics and photo-electricity. Control of variations of the operational characteristics of devices under radiation, thermal and combined treatments. Ex-situ control of the impact of irradiations. 

Contacts: Dr. Eugenijus Gaubas, tel. +37060034126,