Measurements of the barrier parameters in junction structures and devices made of Si, Ge, GaAs, GaN, Cu-CdS and Si solar-cells

Measurements of the barrier parameters in junction structures and devices made of Si, Ge, GaAs, GaN, Cu-CdS and Si solar-cells

Sukurta: 27 November 2018
Unit: Faculty of Physics
Keywords: Barrier evaluation, photo-electrical semiconductor devices, irradiation, RIGOL, Agilent Technologies

Measurement are carried out by using the BELIV-VU instrument which consists of pulsed generator of the linearly increasing voltage of a type RIGOL DG1022, an oscilloscope of a type Agilent Technologies DS05032A and PCB for sample mounting.

This technique and instrument are devoted for analysis of the impact of the radiation, thermal and combined treatments as well as dopant distribution profiling and defect spectroscopy within a high resistivity junction layer.

Application. Enterprises of electronics and photo-electricity. Control of variations of the operational characteristics of devices under radiation, thermal and combined treatments. Ex-situ control of the impact of irradiations. 

Contacts: Dr. Eugenijus Gaubas, tel. +37060034126,