Temperature and spectral scans of the barrier parameters in junction structures and devices made of Si, Ge, GaAs, GaN, Cu-CdS and Si solar-cells

Sukurta: 27 November 2018
Unit: Faculty of Physics
Keywords: Barrier evaluation, photo-electrical semiconductor devices, irradiation, RIGOL, Agilent Technologies

These measurements are addressed to control of spatial, spectral and temperature changes of the barrier parameters in junction structures due to doping and formation of technological as well as heat treatment defects.

Application. Enterprises of electronics and photo-electricity. Control of variations of the operational characteristics of devices under radiation, thermal and combined treatments. Ex-situ control of the impact of irradiations. 

Contacts: Dr. Eugenijus Gaubas, tel. +37060034126,