Measurements of carrier lifetime and its lateral as well as depth distribution in semiconductor materials

Measurements of carrier lifetime and its lateral as well as depth distribution in semiconductor materials

Sukurta: 27 November 2018
Unit: Faculty of Physics
Keywords: Carrier lifetime, semiconductor materials

Determination of carrier lifetime in semiconductor materials. Lifetime measurement up to 1 ns, microwave response sensitivity ~ 0.5 mV. One sample at a time. Computer controlled measurements.

Application. Enterprises engaged in micro-electronics, nano-electronics and the production of photo-electricity devices.

Contacts: Dr. Eugenijus Gaubas,tel. +37060034126,