Measurements of carrier lifetime and its temperature as well as bias illumination dependent variations

Measurements of carrier lifetime and its temperature as well as bias illumination dependent variations

Sukurta: 27 November 2018
Unit: Faculty of Physics
Keywords: Carrier lifetime, semiconductor materials

The microwave probed photoconductivity transients are recorded under temperature and bias illumination changes. Alternatively, carrier lifetime variations n-situ during irradiation of high energy particles are examined.

One sample at one time. Lifetime in-situ measuring range is more than 15 m. Computer controlled measurements. Lifetime measurement up to 1 ns, microwave response sensitivity ~ 0.5 mV.

Application. Enterprises engaged in micro-electronics, nano-electronics and the production of photo-electricity devices. Enterprises engaged in radiation technologies. 

Contacts: Dr. Eugenijus Gaubas, tel. +37060034126,