In-situ measurements of evolution of the radiation defects in semiconductor materials during irradiation by high energy particles

In-situ measurements of evolution of the radiation defects in semiconductor materials during irradiation by high energy particles

Sukurta: 27 November 2018
Unit: Faculty of Physics
Keywords: Carrier lifetime, semiconductor materials, radiation defects, evolution parameters, recombination parameters

In situ control of carrier lifetime changes under introduction of radiation defects during irradiation by high energy particles.

One sample at one time. Lifetime in-situ measuring range is more than 15 m. Computer controlled measurements. Lifetime measurement up to 1 ns, microwave response sensitivity ~ 0.5 mV.

Application. Enterprises engaged in micro-electronics, nano-electronics and the production of photo-electricity devices. Enterprises engaged in radiation technologies. Particle accelerators. 

Contacts: Dr. Eugenijus Gaubas, tel. +37060034126,