Laboratory of Metal-Organic Chemical Vapor Deposition

Keywords: MOCVD technology, technology developments, oxides, thin films, heterostructures, characterisations, applications, microelectronics, opto-electronics, acusto-electronics

This research group develops and optimises MOCVD process and equipment for the growth of films of transparent conductingoxides, mixed electronic-ionic conductors, coated conductors, dielectric, ferro-/piezo-electric, magnetoresistant, superconducting and other functional oxides with improved properties, including epitaxial multilayered heterostructures with new combined functionalities, for applications in micro-, opto-, acusto-electronics and other fields.

Research group activities

Functional oxide films and epitaxial heterostructures with combined different functionalities have a large potential for applications in various new devices of micro-, opto and acusto-electronics (e.g., solar cells, light emitting diodes, lasers, electrochromic devices, sensors, thin film transistors, radio-frequency (RF) devicesas RF-resonators, filters, etc.). So, various oxide films/heterostructures are extensively investigated with a goal to improve the quality of films and functional parameters of devices, and toprepare cost-effective technologies for their production.

Deposition process was elaborated for the grovth of various high quality films and multilayered heterostructures: on monocrystalline and metallic substrates, buffer layers films for phase-change memories, epitaxial heterostructures, superlattices. Various metal-organic precursors used for MOCVD depositions were synthesized in our laboratory.

 

Proposal

We offer:

  • original technological developments and research-scale MOCVD equipment
  • growth of various high quality oxide films
  • synthesis of various metal-organic precursors for MOCVD depositions.

We seek:

Partners for developing competitive research projects targeting HORIZON 2020 and other international programs.

 

Meet our team

Lead researcher

Prof. Habil. Dr. Adulfas Abrutis

Staff

Assoc. prof. Dr. Valentina Plausinaitiene

Assoc. prof. Dr. Virgaudas Kubilius

Senior research fellow Dr. Zita Saltyte

Phd students

Sabina Kuprenaite

Tomas Murauskas

Milita Vagner

 

Research outcomes

125 papers were published in international journals with citation index, cited about 1300 times.

Selected important publications:

  • S. Kuprenaite, T. Murauskas, A. Abrutis, V. Kubilius, Z. Saltyte, V. Plausinaitiene, Properties of In-, Ga-, and Al-doped ZnO films grown by aerosol-assisted MOCVD: Influence of deposition temperature, doping level and annealing. Surface and Coatings Technology, 271 (2015) 156-164.
  • Bartasyte, V. Plausinaitiene, A. Abrutis, T. Murauskas, P. Boulet, S. Margueron, J. Gleize, S. Robert, V. Kubilius, Z. Saltyte. Residual stresses and clamped thermal expansion in LiNbO3 and LiTaO3 thin films. Applied Physics Letters, 101 (2012) 122902.
  • Abrutis, V. Plausinaitiene, M. Skapas, C. Wiemer, O. Salicio, A. Pirovano, E. Varesi, S. Rushworth, W. Gawelda, J. Siegel. Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications. Chemistry of Materials, 20 (2008) 3557-3559.

New technologies elaborated and developed:

  • An original deposition technology - Pulsed Injection MOCVD (PI-MOCVD) - elaborated together with the French National Center for Scientific Research (CNRS). EU and US patent granted to CNRS, A.Abrutis is a co-author of the patents. This technology and research-scale reactors were implemented in universities and research centres in various countries. The technology was also applied in industrial MOCVD reactors (by Aixtron AG, Germany).
  • An original deposition method combining PI-MOCVD and Hot-Wire CVD was elaborated and developed for deposition of oxide and non-oxide materials.
  • A simple and cost-effective method of MOCVD depositions at atmospheric pressure was developed for oxide materials.

Laboratory participated in various European projects:

1) FP4 (COPERNICUS programme): Functional Thin Films Obtained By New MOCVD Techniques, 1997-2000,

2) FP5, MULTIMETOX: Metal Oxide Multilayers Obtained by Cost-Effective New CVD Technologies for Magnetoelectronic Microsystems and Nanotechnologies, 2000-2003,

3) FP5, CERMOX: Advanced Ultra-Thin Ceramic Membranes for Efficient Industrial Processes, 2001-2004,

4) FP6, CHEMAPH: Chemical Vapor Deposition of ChalcogenideMaterials For Phase-Change Memories, 2006-2008.

Many other national and international projects were carried out. Collaboration with many international scientific and industrial partners has been established and developed.

 

Resources

Deposition facilities: Research-scale reactors - 3 low pressure PI-MOCVD reactors, 1 Hot-wire MOCVD reactor, 2 atmospheric pressure MOCVD reactors. Characterisation facilities: XRD, SEM, TEM, EDX, AFM and profilometry, UV-Vis-IR spectroscopy and fluorescence spectrometry, optical microscopy and elipsometry, thermal analysis (TGA, DTA, DSC), electrical (including Hall-effect) measurements, rapid thermal annealing, glove box for the work in an inert and dry atmosphere.

 

Contacts

 

Prof. Dr. Adulfas Abrutis

Faculty of Chemistry and Geosciences

Phone: +370 5 219 3173

E-mail:

More: http://www.chf.vu.lt/MOCVD/index.htm

Department for Research

and Innovation

Phone: +370 5 268 7006

E-mail:

More information: https://www.vu.lt/verslui/

 

Flyer for printing: Laboratory_of_Metal-Organic_chemical_Vapor_Deposition.pdf